By Erik Forsberg.
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Extra info for Electronic and photonic quantum devices
Worschech, P. Hartmann, and A. Forchel, Logic AND/NAND gates based on three-terminal ballistic junctions, El. Lett. 38, 951 (2002).  E. Forsberg and L. Thyl´en, Implications of self-gating effect on electron waveguide devices, Proceedings of Nano-Computing 1999 and the 4th MEL-ARI/NID Workshop, p. 17, Duisburg, Germany, July 1999.  J. A. Hutchby and V. V. Zhrinov, Nanoelectronics: Current status and a need for concept assessments, invited talk at the SRC/TNT Nanoelectronics Workshop, part of the Trends in Nanotechnology 2002, Santiago de Compostela, Spain, Sept.
Due to the low number of phonons and orthogonality of carrier states in low-dimensional lasers it was predicted that the energy relaxation would be inefficient [53, 54], making such lasers less promising in terms of speed and luminescence than was originally expected. g. [55, 56]). The debate has partly concerned mechanisms that seem to limit the effect of this ‘phonon bottleneck’, such as multi-phonon processes , Auger-like mechanisms , defect-state related relaxation . e. difficulties to actually get the electrons to fall into the well, Paper B proposed a novel way to inject electrons into low-dimensional lasers.
Generally, the electrons are injected into a level far above the upper of our two levels concerned with the stimulated emission process, and thus the electrons need first of all to relax down to that level. In any transition, energy and momentum have to be conserved as well as transition rules be obeyed. Due to the low number of phonons and orthogonality of carrier states in low-dimensional lasers it was predicted that the energy relaxation would be inefficient [53, 54], making such lasers less promising in terms of speed and luminescence than was originally expected.
Electronic and photonic quantum devices by Erik Forsberg.