Yoshihiro Ishibashi (auth.), Masanori Professor Okuyama,'s Ferroelectric Thin Films: Basic Properties and Device PDF

By Yoshihiro Ishibashi (auth.), Masanori Professor Okuyama, Yoshihiro Ishibashi (eds.)

ISBN-10: 3540241639

ISBN-13: 9783540241638

Ferroelectric skinny motion pictures proceed to draw a lot recognition because of their constructing, different purposes in reminiscence units, FeRAM, infrared sensors, piezoelectric sensors and actuators. This e-book, aimed toward scholars, researchers and builders, provides designated information regarding the elemental homes of those fabrics and the linked gadget physics. All authors are said specialists within the field.

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Additional resources for Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications

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In this section, we describe the application of excimer UV processing to the chemical preparation of BNT thin films. The effects of excimer UV light irradiation of as-deposited precursor films on the crystallization, microstructure and ferroelectric properties of the resultant thin films have been investigated for the fabrication of ferroelectric BNT films at low processing temperatures [35]. 1 Changes in the Chemical Bonding of Excimer-UV-Irradiated BNT Precursor Films As-deposited BNT precursor films were dried at 150 ◦C for 5 min on a hotplate, and were then irradiated with a Xe excimer UV lamp (172 nm) at 300 ◦ C for 30 min in an O2 atmosphere.

When metal alkoxide was used as a rare earth source (La(Oi Pr)3 or Gd(Oi Pr)3 ), the precursor decreased in weight gradually with increasing temperature up to 600 ◦C, as shown in Figs. 4(b) and 4(e). A similar change in weight was observed for nonsubstituted BIT (Fig. 4(a)). In the first stage, remaining solvents were evaporated at around 100 ◦ C to 150 ◦C, and then residual organic species were decomposed between 150 ◦ C and 550 ◦ C. The exothermic peaks at around 200 ◦C to 300 ◦ C and 400 ◦ C to 500 ◦C observed in DTA corresponded to the combustion of organic species in the precursors.

This microstructure of the film originates from the (00l) preferred orientation. The microstructure of the BNT, BST and BGT films reflected the crystal orientation. The BNT, BST and BGT films were composed of closely packed grains, as shown in Figs. 6(c)–6(e), and these films showed a random orientation with a strong 117 reflection. In particular, the BNT thin film had a homogeneous, smooth surface with a larger grain size of about 200 nm, whereas the BST and BGT thin films had smaller grain sizes than those of the BNT thin films.

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Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications by Yoshihiro Ishibashi (auth.), Masanori Professor Okuyama, Yoshihiro Ishibashi (eds.)


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