Get Handbook of Nitride Semiconductors and Devices, Volume 2: PDF

By Hadis Morkoç

ISBN-10: 352740838X

ISBN-13: 9783527408382

The 3 volumes of this instruction manual deal with the basics, expertise and nanotechnology of nitride semiconductors with a unprecedented readability and intensity. They current all of the beneficial fundamentals of semiconductor and equipment physics and engineering including an intensive reference part. quantity 2 addresses and optical homes of nitride fabrics. It contains semiconductor steel contacts, impurity and provider concentrations, and provider shipping in semiconductors.

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Additional info for Handbook of Nitride Semiconductors and Devices, Volume 2: Electronic and Optical Processes in Nitrides

Example text

17 Thin surface barrier model in the form of a schematic band diagram as proposed in Ref. [8]. 2 Current Flow in Metal–Semiconductor Junctions Let us define V0 as the bias voltage at which f0 ¼ fd holds, then V0 and f0 are given by the following equation: V 0 ¼ fB À qN DS 2 d À V n: 2es ð1:54Þ For V > V0, #2  "sffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi qN DS ND 2es 2 1À ðV 0 À VÞ þ d À d þ V þ V n : f0 ¼ 2es N DS qN D ð1:55Þ For V < V0, f0 ¼ V þ V n : ð1:56Þ Following the steps of Padovani and Stratton [7], one can calculate current owing to the TFE/FE process.

11. 8 treats the problem well. 11a. 11b. As in the case of forward bias, we can think of the TFE current being dominant in an intermediate temperature range and the FE current being dominant in low-temperature range. 11b. 11 Potential energy diagram and current flow mechanisms for a reverse-biased Schottky barrier: (a) for the TE process, which is more likely when the doping level in the semiconductor is relatively low and thus the Fermi level is below the conduction band, and (b) for TFE and direct tunneling, which is also referred to as FE.

13 for the Ni/GaN contact [8]. 16 but now for the field emission current are defined as qf À qV bm ¼ B ; ð1:41Þ E 00   1 4ðfB À VÞ ; ð1:42Þ cm ¼ log 2E 00 Vn and 1 f m ¼ E 00 qV n : 4 ð1:43Þ Padovani and Stratton [7] presented an analytical expression for the forward current for direct tunneling as   qV ; ð1:44Þ J FE ¼ J SFE exp E 00 and J SFE ¼   2pAÃ T 2 E 00 À qfB h n   oi h n  oi exp : pkT kT kT log 2 ðfBVÀn VÞ log 2 fBVÀn V sin 2E 00 ð1:45Þ For the reverse-bias case, the parameters bm, cm, and fm are defined as " pffiffiffiffiffiffiffiffi pffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi# qfB þ qfB À qV 1 pffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi pffiffiffiffiffiffiffiffiffiffiffiffi bm ¼ ; qfB ðqfB À qVÞ þ qV log E 00 À qV cm ¼ 1 log E 00 pffiffiffiffiffiffiffiffi pffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi qfB þ qfB À qV pffiffiffiffiffiffiffiffiffiffiffiffi ; À qV ð1:46Þ ð1:47Þ and fm ¼ À 1 E 00 E: 4 ð1:48Þ The above parameters, however, are not easily traceable in terms of experiments.

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Handbook of Nitride Semiconductors and Devices, Volume 2: Electronic and Optical Processes in Nitrides by Hadis Morkoç

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