By Shyam P. Murarka
Many of the material of this ebook has formerly been to be had in basic terms within the type of learn papers and assessment articles. i have never tried to consult all of the released papers. The reader may possibly locate it valuable to consult the references indexed
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Additional info for Silicides for Vlsi Applications
Such stress arises from several factors, such as lattice mismatch between the substrate and film, the difference between the thermal expansion coefficients of the film and the substrate, and the intrinsic stress related to the mechanical structure and properties of the film. In general intrinsic stress is the dominant component.
33). As the metal content of the film increases, the stress changes to tensile and increases in magnitude before decreasing in films with Mo/Si > 2. This stress decrease in film with a nominal Mo/Si = 4 is perhaps associated with 3 ο 1 3 2 NOMINAL S i / M E T A L ATOMIC RATIO Fig. 32. R o o m temperature stress in sintered C o S i and PtSi^, films on silicon as a function of the nominal values of χ [from Murarka ( 1 8 ) ] . x STRESS 57 the short-range order or clustering of molybdenum as detected in X-ray diffraction studies (68).
Different metals show different sintering behavior (64). 2) film on S i 0 as a function of the sintering temperature. The observed maximum in this cosputtered film is unusual, because in cosputtered films of TiSi (80), TaSi (82), CoSi (84), NiSi (85), PtSi (86), and HfSi (87), the sheet resistance 2 2 2 2 2 2 RESISTIVITY 41 TEMPERATURE (°C) Fig. 23. S h e e t resistance and the integrated X-ray diffraction intensity (of both hexagonal and tetragonal W S i ) as a function of sintering temperature (30 min, in 15% H 2 — 8 5 % N ) .
Silicides for Vlsi Applications by Shyam P. Murarka