By E. Kasper and E.H.C. Parker (Eds.)
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Extra resources for Silicon Molecular Beam Epitaxy
Zunger, Appl. Phys. , 53 (1988) 2077. C. G. Van de Walle and R. M. Martin, Phys. Rev. B, 34 (1986) 5621. F. H. Pollak and M. Cardona, Phys. , 172 (1968) 816. M. Tinkham, Group Theory and Quantum Mechanics, McGraw-Hill, New York, 1964. Thin Solid Films, 183 (1989) 49-55 49 OPTICAL PROPERTIES OF PERFECT AND IMPERFECT Si-Ge SUPERLATTICES K. B. WONG, R. J. TURTON AND M. ) (Received May 30, 1989) We report fresh pseudopotential calculations of the electronic structure and optical properties of Si-Ge superlattices.
Hybertsen, M. Schluter, R. People, S. A. Jackson, D. V. Lang, T. P. Pearsall, J. C. Bean, J. M. Vandenberg and J. Bevk, Phys. Rev. B, 37(1988) 10195. 9 S. Satpathy, R. M. Martin and C. G. Van de Walle, Phys. Rev. B, 38 (1988) 13237. 10 G. Abstreiter, K. Eberl, E. Friess, W. Wegscheider and R. Zachai, J. Cryst. Growth, 95 (1989) 431. 11 T. P. Pearsall, J. Bevk, J. C. Bean, J. Bonar, J. P. Mannaerts and A. Ourmazd, Phys. Rev. B, 39 (1989)3741. 12 S. Froyen, D. M. Wood and A. Zunger, Appl. Phys. , 54 (1989) 2435.
11 P. F. Yuh and K. L. Wang, to be published. 12 K. L. Wang and P. F. Yuh, IEEEJ. Quantum Electron, QE-25 (1989) 12. Thin Solid Films, 183 (1989) 33-48 33 ELECTRONIC STRUCTURE OF ULTRATHIN Si„Gew STRAINED SUPERLATTICES: THE POSSIBILITY OF DIRECT BAND GAPS SVERRE FROYEN, D. M. ) (Received May 30, 1989) We examine theoretically the structural and electronic properties of thin Si„Ge„ superlattices for n = 1,2,4 and 6, grown on (001) and (110)-oriented substrates. The increased repeat distance along the growth direction leads to folding of conduction band states to the F point of the superlattice Brillouin zone, resulting in a significant reduction in the minimum direct band gap.
Silicon Molecular Beam Epitaxy by E. Kasper and E.H.C. Parker (Eds.)